1 http://www.fujielectric.com/products/semiconductor/ 1MBI300U2H-060L-50 igbt modules igbt module (u series) 600v / 300a / 1 in one package features high speed switching voltage drive low inductance module structure applications inverter db for motor drive ac and dc servo drive amplifer (db) active pfc industrial machines maximum ratings and characteristics absolute maximum ratings (at t c =25c unless otherwise specifed) items symbols conditions maximum ratings units collector-emitter voltage v ces 600 v gate-emitter voltage v ges 20 v collector current i c continuous t c =25c 300 a t c =80c 270 i cp 1ms t c =25c 600 t c =80c 600 -i c continuous t c =25c 300 t c =80c 200 -i c pluse 1ms t c =25c 600 t c =80c 600 collector power dissipation p c 1 device 1000 forword current for fwd i f continuous t c =25c 400 t c =80c 260 i f pulse 1ms t c =25c 800 t c =80c 800 junction temperature t j 150 c storage temperature t stg -40~ +125 isolation oltage between terminal and copper base *1 v iso ac : 1min. 2500 vac screw torque mounting *2 3.5 nm terminals *2 4.5 note *1: all terminals should be connected together when isolation test will be done. note *2: recommendable value : mounting 2.5~3.5 nm (m5) terminals 3.5~4.5 nm (m6)
2 1MBI300U2H-060L-50 http://www.fujielectric.com/products/semiconductor/ 3 igbt modules electrical characteristics (at t j = 25c unless otherwise specifed) items symbols conditions characteristics units min. typ. max. inverter zero gate voltage collector current i ces v ge = 0v v ce = 600v - - 2.00 ma gate-emitter leakage current i ges v ce = 0v v ge =20v - - 400 na gate-emitter threshold voltage v ge(th) v ce = 20v i c = 300ma 6.2 6.7 7.7 v collector-emitter saturation voltage v ce(sat) (terminal) v ge =15v i c = 300a t j = 25c - 2.05 2.45 v t j =125c - 2.30 - v ce(sat) (chip) t j = 25c - 1.80 - t j =125c - 2.05 - input capacitance c ies v ce =10v,v ge =0v,f=1mhz - 23.0 - nf turn-on time t on v cc = 300v i c = 300a v ge = 15v r g = 9.1 - 0.40 1.20 s t r - 0.22 0.60 t r (i) - 0.16 - turn-off time t off - 0.48 1.20 t f - 0.07 0.45 forward on voltage v f (terminal) v ge =0v i f = 300a t j = 25c - 1.85 2.30 v t j =125c - 1.90 - v f (chip) t j = 25c - 1.60 - t j =125c - 1.65 - reverse recovery time t rr i f = 300a - - 0.35 s fwd forward on voltage v f (terminal) v ge =0v i f = 400a t j = 25c - 1.85 2.35 v t j =125c - 1.90 - v f (chip) t j = 25c - 1.60 - t j =125c - 1.65 - reverse recovery time t rr i f = 400a - - 0.35 s lead resistance, terminal-chip *3 r lead - 0.53 - m note *3: biggest internal terminal resistance among arm. thermal resistance characteristics items symbols conditions characteristics units min. typ. max. thermal resistance (1device) r th(j-c) igbt - - 0.125 c/w inverse diode - - 0.23 fwd - - 0.16 contact thermal resistance (1device) *4 r th(c-f) with thermal compound - 0.025 - note *4: this is the value which is defned mounting on the additional cooling fn with thermal compound.
2 3 igbt modules http://www.fujielectric.com/products/semiconductor/ 1MBI300U2H-060L-50 characteristics (representative) 0 150 300 450 600 750 0 1 2 3 4 5 v ge =20v 15v 12v 10v 8v 0 150 300 450 600 750 0 1 2 3 4 5 v ge =20v 15v 12v 10v 8v 0 150 300 450 600 750 0 1 2 3 4 t j =125c t j =25c 0 2 4 6 8 10 5 10 15 20 25 i c =600a i c =300a i c =150a 0.1 1.0 10.0 100.0 0 10 20 30 c ies c oes c res 0 500 1000 1500 v ge v ce dynamic gate charge (typ.) v cc =300v, i c =300a, t j =25 o c collector current vs. collector-emitter voltage (typ.) t j =25c / chip collector current vs. collector-emitter voltage (typ.) t j =125c / chip collector current vs. collector-emitter voltage (typ.) v ge =15v / chip collector-emitter voltage vs. gate-emitter voltage (typ.) t j =25c / chip collector-emitter voltage : v ce [ v ] co ll e c t or c urren t : i c [ a ] collector-emitter voltage : v ce [ v ] c o ll e ct o r c u rr en t : i c [a ] collector-emitter voltage : v ce [ v ] c o ll e ct o r c u rr en t : i c [ a ] capacitance : c ies , c oes , c res [ nf ] gate-emitter voltage : v ge [ v ] collector-emitter voltage : v ce [ v ] gate charge : q g [ nc ] collector- emitter voltage : v ce [ 100v/div ] gate-emitter voltage : v ge [ 5v/div ] capacitance vs. collector-emitter voltage (typ.) v ge =0v, f=1mhz, t j =25c collector-emitter voltage : v ce [ v ]
4 1MBI300U2H-060L-50 http://www.fujielectric.com/products/semiconductor/ 5 igbt modules 10 100 1000 10000 0 150 300 450 600 t r t f t off t on 10 100 1000 10000 0 150 300 450 600 t r t f t off t on 10 100 1000 10000 1.0 10.0 100.0 t r t f t off t on 0 5 10 15 20 25 0 150 300 450 600 e on (125c) e on (25c) e off (125c) e rr (125c) e rr (25c) e off (25c) 0 10 20 30 40 1.0 10.0 100.0 e off e rr e on 0 150 300 450 600 750 0 200 400 600 800 switching loss vs. collector current (typ.) v cc =300v, i c =300a, v ge =15v, t j =25 o c switching time vs. gate resistance (typ.) switching time vs. collector current (typ.) switching time vs. collector current (typ.) v cc =300v, v ge =15v, r g =9.1?, t j =25 o c v cc =300v, v ge =15v, r g =9.1?, t j =125 o c v cc =300v, v ge =15v, r g =9.1? +v ge =15v, -v ge <= 15v, r g >= 9.1?,t j <= 125 o c switching loss vs. gate resistance (typ.) reverse bias safe operating area (max.) v cc =300v, i c =300a, v ge =15v, t j =125 o c collector current : i c [ a ] collector current : i c [ a ] gate resistance : r g [ ? ] collector current : i c [ a ] gate resistance : r g [ ? ] collector-emitter voltage : v ce [ v ] c o ll e ct o r c u rr en t : i c [ a ] switching loss : e on , e off , e rr [ mj/pulse ] switching loss : e on , e off , e rr [ mj/pulse ] switching time : t on , t r , t off , t f [ nsec ] switching time : t on , t r , t off , t f [ nsec ] switching time : t on , t r , t off , t f [ nsec ]
4 5 igbt modules http://www.fujielectric.com/products/semiconductor/ 1MBI300U2H-060L-50 0 150 300 450 600 750 0 1 2 3 t j =125c t j =25c 10 100 1000 0 150 300 450 600 t rr (125c) i rr (125c) i rr (25c) t rr (25c) 0.001 0.010 0.100 1.000 0.001 0.010 0.100 1.000 inverse diode igbt fwd 0 200 400 600 800 1000 0 1 2 3 t j =125c t j =25c t r ansi e nt th e r m a l r e sistanc e ( m a x . ) reverse recovery characteristics (typ.) v cc =300v, v ge =15v, r g =9.1? forward on voltage : v f [ v ] f o r wa r d c u rr en t : i f [ a ] forward current : i f [ a ] pulse width : p w [ sec ] forward on voltage : v f [ v ] f o r wa r d c u rr en t : i f [ a ] reverse recovery current : i rr [ a ] reverse recovery time : t rr [ nsec ] thermal resistance : r th (j-c) [ o c/w ] forward current vs. forward on voltage for inverse diode (typ.) chip forward current vs. forward on voltage for fwd (typ.)
6 1MBI300U2H-060L-50 http://www.fujielectric.com/products/semiconductor/ 7 igbt modules equivalent circuit schematic nc c1 e2 g1 e1 e1c2 g2 e2 fwd inverse
6 7 igbt modules http://www.fujielectric.com/products/semiconductor/ 1MBI300U2H-060L-50 warning 1. this catalog contains the product specifcations, characteristics, data, materials, and structures as of may 2011. the contents are subject to change without notice for specifcation changes or other reasons. when using a product listed in this catalog, be sur to obtain the latest specifcations. 2. all applications described in this catalog exemplify the use of fuji's products for your reference only. no right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by fuji electric co., ltd. is (or shall be deemed) granted. fuji electric co., ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. although fuji electric co., ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. when using fuji electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fre, or other problem if any of the products become faulty. it is recommended to make your design failsafe, fame retardant, and free of malfunction. 4. the products introduced in this catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. ? computers ? oa equipment ? communications equipment (terminal devices) ? measurement equipment ? machine tools ? audiovisual equipment ? electrical home appliances ? personal equipment ? industrial robots etc. 5. if you need to use a product in this catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact fuji electric co., ltd. to obtain prior approval. when using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a fuji's product incorporated in the equipment becomes faulty. ? transportation equipment (mounted on cars and ships) ? trunk communications equipment ? traffc-signal control equipment ? gas leakage detectors with an auto-shut-off feature ? emergency equipment for responding to disasters and anti-burglary devices ? safety devices ? medical equipment 6. do not use products in this catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). ? space equipment ? aeronautic equipment ? nuclear control equipment ? submarine repeater equipment 7. copyright ?1996-2011 by fuji electric co., ltd. all rights reserved. no part of this catalog may be reproduced in any form or by any means without the express permission of fuji electric co., ltd. 8. if you have any question about any portion in this catalog, ask fuji electric co., ltd. or its sales agents before using the product. neither fuji electric co., ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein.
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